Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLS - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and
نویسنده
چکیده
A novel bipolar transistor structure, namely, a SiC emitter lateral NPM Schottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. A comprehensive comparison of the proposed structure with its equivalent Si lateral NPN BJT and an SiC emitter lateral NPN HBT is presented. Based on simulation results, the authors demonstrate for the first time that the proposed SiC emitter lateral NPM transistor shows superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect over its equivalent Si lateral NPN BJT and SiC emitter lateral NPN HBT. A simple fabrication process compatible with BiCMOS technology is also discussed.
منابع مشابه
High Performance Lateral Schottky Collector Bipolar Transistors on SOI for VLSI Applications
Advanced bipolar transistors play a vital role in RF/Microwave applications. But they need to satisfy stringent demands on device performance parameters such as β, gm, and fT. Many of the bipolar technologies developed to meet these demands are vertical structures and suffer from many non−ideal effects at high collector current densities. In the present work, to enhance the performance limits o...
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